DIBL and subthreshold swing effect on carbon nanotube field effect transistor

DIBL and subthreshold swing effect on carbon nanotube field effect transistor

Silicon based devices are getting problem with the limitation of channel length for fabrication of the miniature size. Short channel effects are creating such problem of the silicon devices. Thus CNT is a smart choice for replacement with the silicon. A brief analysis of the effect of short channel...

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Main Authors: Farhana, Soheli, Alam, A. H. M. Zahirul, Khan, Sheroz
Format: Conference or Workshop Item
Language:English
English
Published: 2015
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://irep.iium.edu.my/44492/
http://irep.iium.edu.my/44492/
http://irep.iium.edu.my/44492/1/WCE2015_pp455-458.pdf
http://irep.iium.edu.my/44492/4/44492_DIBL%20and%20subthreshold%20swing%20effect%20on%20carbon%20nanotube%20field%20effect%20transistor_SCOPUS.pdf
id iium-44492
recordtype eprints
spelling iium-444922018-03-06T04:05:20Z http://irep.iium.edu.my/44492/ DIBL and subthreshold swing effect on carbon nanotube field effect transistor Farhana, Soheli Alam, A. H. M. Zahirul Khan, Sheroz TK Electrical engineering. Electronics Nuclear engineering Silicon based devices are getting problem with the limitation of channel length for fabrication of the miniature size. Short channel effects are creating such problem of the silicon devices. Thus CNT is a smart choice for replacement with the silicon. A brief analysis of the effect of short channel carbon nanotube field effect transistor (CNTFET) is elucidated in this paper. The analysis of the CNTFET model shows the Drain Induced Barrier lowering (DIBL) and sub-threshold Swing (S) of CNTFET with the channel of 14nm. The analysis of SS and DIBL shows the best electronics performance of CNT. High-k transistor can be fit for this material such as Hfo2 performs low subthreshold swing because of get large gate capacitance. This analysis is necessary for the design of a lower scaling channel of CNTFET. 2015-07 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/44492/1/WCE2015_pp455-458.pdf application/pdf en http://irep.iium.edu.my/44492/4/44492_DIBL%20and%20subthreshold%20swing%20effect%20on%20carbon%20nanotube%20field%20effect%20transistor_SCOPUS.pdf Farhana, Soheli and Alam, A. H. M. Zahirul and Khan, Sheroz (2015) DIBL and subthreshold swing effect on carbon nanotube field effect transistor. In: World Congress on Engineering (WCE 2015), 1st-3rd July 2015, London, UK. http://www.iaeng.org/publication/WCE2015/WCE2015_pp455-458.pdf
repository_type Digital Repository
institution_category Local University
institution International Islamic University Malaysia
building IIUM Repository
collection Online Access
language English
English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Farhana, Soheli
Alam, A. H. M. Zahirul
Khan, Sheroz
DIBL and subthreshold swing effect on carbon nanotube field effect transistor
description Silicon based devices are getting problem with the limitation of channel length for fabrication of the miniature size. Short channel effects are creating such problem of the silicon devices. Thus CNT is a smart choice for replacement with the silicon. A brief analysis of the effect of short channel carbon nanotube field effect transistor (CNTFET) is elucidated in this paper. The analysis of the CNTFET model shows the Drain Induced Barrier lowering (DIBL) and sub-threshold Swing (S) of CNTFET with the channel of 14nm. The analysis of SS and DIBL shows the best electronics performance of CNT. High-k transistor can be fit for this material such as Hfo2 performs low subthreshold swing because of get large gate capacitance. This analysis is necessary for the design of a lower scaling channel of CNTFET.
format Conference or Workshop Item
author Farhana, Soheli
Alam, A. H. M. Zahirul
Khan, Sheroz
author_facet Farhana, Soheli
Alam, A. H. M. Zahirul
Khan, Sheroz
author_sort Farhana, Soheli
title DIBL and subthreshold swing effect on carbon nanotube field effect transistor
title_short DIBL and subthreshold swing effect on carbon nanotube field effect transistor
title_full DIBL and subthreshold swing effect on carbon nanotube field effect transistor
title_fullStr DIBL and subthreshold swing effect on carbon nanotube field effect transistor
title_full_unstemmed DIBL and subthreshold swing effect on carbon nanotube field effect transistor
title_sort dibl and subthreshold swing effect on carbon nanotube field effect transistor
publishDate 2015
url http://irep.iium.edu.my/44492/
http://irep.iium.edu.my/44492/
http://irep.iium.edu.my/44492/1/WCE2015_pp455-458.pdf
http://irep.iium.edu.my/44492/4/44492_DIBL%20and%20subthreshold%20swing%20effect%20on%20carbon%20nanotube%20field%20effect%20transistor_SCOPUS.pdf
first_indexed 2023-09-18T21:03:15Z
last_indexed 2023-09-18T21:03:15Z
_version_ 1777410764570624000

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