CNTFET SPICE model: design of a carbon nanotube field effect transistor
In this paper, we elucidate the development of SPICE model of Carbon Nanotube Field Effect Transistor (CNTFET) and analyze the performance of the proposed model. A set of key parameter can be obtained from this model analysis such as drain current variation as a function of the conductance and...
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iium-426322017-09-21T01:46:39Z http://irep.iium.edu.my/42632/ CNTFET SPICE model: design of a carbon nanotube field effect transistor Farhana, Soheli Alam, A. H. M. Zahirul Khan, Sheroz Motakabber, S.M.A. TK Electrical engineering. Electronics Nuclear engineering In this paper, we elucidate the development of SPICE model of Carbon Nanotube Field Effect Transistor (CNTFET) and analyze the performance of the proposed model. A set of key parameter can be obtained from this model analysis such as drain current variation as a function of the conductance and drain-source voltage. Furthermore, a SPICE small signal model nanotube transistor is developed. It is used for studying the performance of current gain as well as design of nanotube transistor circuits and phase angle with cut-off frequency. CNT diameter is responsible for the better performance of CNTFET. Therefore an optimum diameter of CNT is imposed here to develop CNTFET. 2014 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/42632/1/ICCCE.pdf application/pdf en http://irep.iium.edu.my/42632/4/42632_CNTFET%20SPICE%20model_Scopus.pdf Farhana, Soheli and Alam, A. H. M. Zahirul and Khan, Sheroz and Motakabber, S.M.A. (2014) CNTFET SPICE model: design of a carbon nanotube field effect transistor. In: 5th International Conference on Computer & Communication Engineering 2014, 23th -25th September 2014, Kuala Lumpur, Malaysia. http://dx.doi.org/10.1109/ICCCE.2014.81 doi:10.1109/ICCCE.2014.81 |
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TK Electrical engineering. Electronics Nuclear engineering |
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TK Electrical engineering. Electronics Nuclear engineering Farhana, Soheli Alam, A. H. M. Zahirul Khan, Sheroz Motakabber, S.M.A. CNTFET SPICE model: design of a carbon nanotube field effect transistor |
description |
In this paper, we elucidate the development of SPICE model of Carbon Nanotube Field Effect Transistor (CNTFET)
and analyze the performance of the proposed model. A set of key parameter can be obtained from this model analysis such as
drain current variation as a function of the conductance and drain-source voltage. Furthermore, a SPICE small signal model
nanotube transistor is developed. It is used for studying the performance of current gain as well as design of nanotube
transistor circuits and phase angle with cut-off frequency. CNT diameter is responsible for the better performance of CNTFET.
Therefore an optimum diameter of CNT is imposed here to develop CNTFET. |
format |
Conference or Workshop Item |
author |
Farhana, Soheli Alam, A. H. M. Zahirul Khan, Sheroz Motakabber, S.M.A. |
author_facet |
Farhana, Soheli Alam, A. H. M. Zahirul Khan, Sheroz Motakabber, S.M.A. |
author_sort |
Farhana, Soheli |
title |
CNTFET SPICE model: design of a carbon nanotube field effect transistor |
title_short |
CNTFET SPICE model: design of a carbon nanotube field effect transistor |
title_full |
CNTFET SPICE model: design of a carbon nanotube field effect transistor |
title_fullStr |
CNTFET SPICE model: design of a carbon nanotube field effect transistor |
title_full_unstemmed |
CNTFET SPICE model: design of a carbon nanotube field effect transistor |
title_sort |
cntfet spice model: design of a carbon nanotube field effect transistor |
publishDate |
2014 |
url |
http://irep.iium.edu.my/42632/ http://irep.iium.edu.my/42632/ http://irep.iium.edu.my/42632/ http://irep.iium.edu.my/42632/1/ICCCE.pdf http://irep.iium.edu.my/42632/4/42632_CNTFET%20SPICE%20model_Scopus.pdf |
first_indexed |
2023-09-18T21:00:45Z |
last_indexed |
2023-09-18T21:00:45Z |
_version_ |
1777410606969651200 |