Highly efficient short length Bismuth-based erbium-doped fiber amplifier
An efficient 21 cm Bismuth-based erbium doped fiber amplifier (Bi-EDFA) operating in both C- and L-band wavelength regions is proposed and demonstrated. The proposed Bi-EDFA uses the gain medium with an erbium ion concentration of 6300 ppm in conjunction with a double-pass configuration. Compared to...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Springer
2011
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/41861/ http://irep.iium.edu.my/41861/ http://irep.iium.edu.my/41861/1/Highly_Efficient_Short_Length_Bismuth-based_Erbium-doped_Fiber_Amplifier_%28_3__August__2011%29.pdf |
| Summary: | An efficient 21 cm Bismuth-based erbium doped fiber amplifier (Bi-EDFA) operating in both C- and L-band wavelength regions is proposed and demonstrated. The proposed Bi-EDFA uses the gain medium with an erbium ion concentration of 6300 ppm in conjunction with a double-pass configuration. Compared to conventional silica-based erbium-doped fiber amplifiers (Si-EDFAs) with the same amount of Erbium ions, the Bi-EDFA provides a higher attainable gain as well as a greater amplification bandwidth ranging from 1525 to 1620 nm. The proposed Bi-EDFA achieved a flat-gain of around 23 dB with gain variation of ±3.5 dB within the wavelength region from 1530 to 1565 nm at the maximum pump power of 150 mW. The corresponding noise figures are obtained at an average of 6 dB. |
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