Compact and wide-band bismuth-based erbium-doped fibre amplifier based on two-stage and double-pass approaches

In this study, a wide-band erbium-doped fibre amplifier (EDFA) operating in both C- and L-band wavelength regions is demonstrated based on two-stage and double-pass approaches. The amplifier employs two pieces of 21 and 46 cm long bismuth-based EDFs (Bi-EDFs) optimised for C- and L-band operations,...

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Main Authors:	Cheng, X.S., Hamida , Belal Ahmed, Ahmed Wathik, Naji, Hamzah, Arof, Harith B., Ahmad, Harun, Sulaiman Wadi
Format:	Article
Language:	English
Published:	Inst Engineering Technology-Iet 2012
Subjects:	T10.5 Communication of technical information
Online Access:	http://irep.iium.edu.my/41857/ http://irep.iium.edu.my/41857/ http://irep.iium.edu.my/41857/1/Compact_and_wide-band_bismuth-based_erbium-doped_Amplifier_Based_on_Two-Stage_and_Double-Pass_Approaches_%282012%29.pdf

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spelling	iium-418572015-03-13T02:28:02Z http://irep.iium.edu.my/41857/ Compact and wide-band bismuth-based erbium-doped fibre amplifier based on two-stage and double-pass approaches Cheng, X.S. Hamida , Belal Ahmed Ahmed Wathik, Naji Hamzah, Arof Harith B., Ahmad Harun, Sulaiman Wadi T10.5 Communication of technical information In this study, a wide-band erbium-doped fibre amplifier (EDFA) operating in both C- and L-band wavelength regions is demonstrated based on two-stage and double-pass approaches. The amplifier employs two pieces of 21 and 46 cm long bismuth-based EDFs (Bi-EDFs) optimised for C- and L-band operations, respectively, which are pumped by 1480 nm laser diode and its performances are investigated in both parallel and linear configurations. Wide-band operation is achieved in both configurations that covers from 1525 to 1620 nm. Compared with the linear Bi-EDFA, the parallel Bi-EDFA provides a higher attainable gain especially for small input signal. At input signal power of -30 dBm, the average gains of the parallel Bi-EDFA are obtained at approximately 20 dB with gain variation of ±2.5 dB within the wavelength region from 1530 to 1605 nm. At the input signal power of 0 dBm, the average gains of approximately 10 dB with a gain variation of ±2 dB within 1540 to 1620 nm region are obtained by both parallel and linear Bi-EDFAs. The noise figures for both configurations are maintained below 10 dB in the wavelength region from 1535 to 1620 nm. The noise figures are mainly because of spurious reflection in the cavity and high reflection of amplified spontaneous emission (ASE) from the end face. Inst Engineering Technology-Iet 2012-06 Article PeerReviewed application/pdf en http://irep.iium.edu.my/41857/1/Compact_and_wide-band_bismuth-based_erbium-doped_Amplifier_Based_on_Two-Stage_and_Double-Pass_Approaches_%282012%29.pdf Cheng, X.S. and Hamida , Belal Ahmed and Ahmed Wathik, Naji and Hamzah, Arof and Harith B., Ahmad and Harun, Sulaiman Wadi (2012) Compact and wide-band bismuth-based erbium-doped fibre amplifier based on two-stage and double-pass approaches. IET Optoelectronics, 6 (3). pp. 127-130. ISSN 1751-8768 http://digital-library.theiet.org/
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English
topic	T10.5 Communication of technical information
spellingShingle	T10.5 Communication of technical information Cheng, X.S. Hamida , Belal Ahmed Ahmed Wathik, Naji Hamzah, Arof Harith B., Ahmad Harun, Sulaiman Wadi Compact and wide-band bismuth-based erbium-doped fibre amplifier based on two-stage and double-pass approaches
description	In this study, a wide-band erbium-doped fibre amplifier (EDFA) operating in both C- and L-band wavelength regions is demonstrated based on two-stage and double-pass approaches. The amplifier employs two pieces of 21 and 46 cm long bismuth-based EDFs (Bi-EDFs) optimised for C- and L-band operations, respectively, which are pumped by 1480 nm laser diode and its performances are investigated in both parallel and linear configurations. Wide-band operation is achieved in both configurations that covers from 1525 to 1620 nm. Compared with the linear Bi-EDFA, the parallel Bi-EDFA provides a higher attainable gain especially for small input signal. At input signal power of -30 dBm, the average gains of the parallel Bi-EDFA are obtained at approximately 20 dB with gain variation of ±2.5 dB within the wavelength region from 1530 to 1605 nm. At the input signal power of 0 dBm, the average gains of approximately 10 dB with a gain variation of ±2 dB within 1540 to 1620 nm region are obtained by both parallel and linear Bi-EDFAs. The noise figures for both configurations are maintained below 10 dB in the wavelength region from 1535 to 1620 nm. The noise figures are mainly because of spurious reflection in the cavity and high reflection of amplified spontaneous emission (ASE) from the end face.
format	Article
author	Cheng, X.S. Hamida , Belal Ahmed Ahmed Wathik, Naji Hamzah, Arof Harith B., Ahmad Harun, Sulaiman Wadi
author_facet	Cheng, X.S. Hamida , Belal Ahmed Ahmed Wathik, Naji Hamzah, Arof Harith B., Ahmad Harun, Sulaiman Wadi
author_sort	Cheng, X.S.
title	Compact and wide-band bismuth-based erbium-doped fibre amplifier based on two-stage and double-pass approaches
title_short	Compact and wide-band bismuth-based erbium-doped fibre amplifier based on two-stage and double-pass approaches
title_full	Compact and wide-band bismuth-based erbium-doped fibre amplifier based on two-stage and double-pass approaches
title_fullStr	Compact and wide-band bismuth-based erbium-doped fibre amplifier based on two-stage and double-pass approaches
title_full_unstemmed	Compact and wide-band bismuth-based erbium-doped fibre amplifier based on two-stage and double-pass approaches
title_sort	compact and wide-band bismuth-based erbium-doped fibre amplifier based on two-stage and double-pass approaches
publisher	Inst Engineering Technology-Iet
publishDate	2012
url	http://irep.iium.edu.my/41857/ http://irep.iium.edu.my/41857/ http://irep.iium.edu.my/41857/1/Compact_and_wide-band_bismuth-based_erbium-doped_Amplifier_Based_on_Two-Stage_and_Double-Pass_Approaches_%282012%29.pdf
first_indexed	2023-09-18T20:59:48Z
last_indexed	2023-09-18T20:59:48Z
_version_	1777410547396902912

Compact and wide-band bismuth-based erbium-doped fibre amplifier based on two-stage and double-pass approaches

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