Electronic state transition in cooperatively interacting point-defects in semiconductor crystals
Electron state transition of deep level point defects in a semiconductor crystal was studied. Low-temperature grown GaAs produced excess antisite As (AsGa) which produces localized spin when doped with Be. A nearly abrupt decrease of 1.7% of the resistance is detected at a temperature around 4 K whi...
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
IEEE
2014
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/40449/ http://irep.iium.edu.my/40449/ http://irep.iium.edu.my/40449/ http://irep.iium.edu.my/40449/1/electronic_state_transition_in_cooperatively_interacting_point_defect_in_semiconductor_crystals.pdf |
| Summary: | Electron state transition of deep level point defects in a semiconductor crystal was studied. Low-temperature grown GaAs produced excess antisite As (AsGa) which produces localized spin when doped with Be. A nearly abrupt decrease of 1.7% of the resistance is detected at a temperature around 4 K which is consistent with abrupt decrease of magnetization. These observations are explained as a result of cooperative transition of electron states of AsGa defects. First-principal calculations of the electron state of an AsGa atom with a shallow acceptor Be show that at the transition an AsGa+ ion is displaced to the interstitial site and becomes a neutral atom and finally results in formation of a hole producing enhancement in conductivity. |
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