Channel length effect on the saturation current and the threshold voltages of CNTFET

Carbon nanotubes (CNTs) are such promising material in future microelectronic devices due to their great property in conductivity, mechanical strength and light weight. Field effect transistor (FET) has already come to its most maximum efficiency because of their reduced size leads to decrease in...

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Main Authors:	Ani, Mohd Hanafi, Muhamad Ali, Abu Hanifah, Mohamed, Mohd Ambri
Format:	Conference or Workshop Item
Language:	English
Published:	IEEE 2014
Subjects:	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:	http://irep.iium.edu.my/40448/ http://irep.iium.edu.my/40448/ http://irep.iium.edu.my/40448/ http://irep.iium.edu.my/40448/1/Channel_length_effect_on_the_saturation_current_and_the_threshold_voltages_of_cntfet.pdf

id	iium-40448
recordtype	eprints
spelling	iium-404482018-05-24T08:01:18Z http://irep.iium.edu.my/40448/ Channel length effect on the saturation current and the threshold voltages of CNTFET Ani, Mohd Hanafi Muhamad Ali, Abu Hanifah Mohamed, Mohd Ambri TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Carbon nanotubes (CNTs) are such promising material in future microelectronic devices due to their great property in conductivity, mechanical strength and light weight. Field effect transistor (FET) has already come to its most maximum efficiency because of their reduced size leads to decrease in their capability in conducting electric. It is interested to embed ballistic electron transfer capability of CNTs on FET. In this study, direct growth method of CNTs was employed to attach it on FET electrodes with various terminal gaps. The results show that CNTFET has successfully fabricated, with averaged saturation currents always lowest at the channel size of 15μm. While their highest measured threshold voltage value is 4.291 V at 15 μm gap. This phenomenon is attributed to the change of CNTs’ chirality, which apparently changes the metallic type of CNTs to the semiconducting CNTs. IEEE 2014-10-14 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/40448/1/Channel_length_effect_on_the_saturation_current_and_the_threshold_voltages_of_cntfet.pdf Ani, Mohd Hanafi and Muhamad Ali, Abu Hanifah and Mohamed, Mohd Ambri (2014) Channel length effect on the saturation current and the threshold voltages of CNTFET. In: 11th IEEE International Conference on Semiconductor Electronics, ICSE 2014, 27 - 29 August 2014, Berjaya Times Square Hotel Kuala Lumpur; Malaysia. http://ieeexplore.ieee.org/ 10.1109/SMELEC.2014.6920844
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English
topic	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
spellingShingle	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Ani, Mohd Hanafi Muhamad Ali, Abu Hanifah Mohamed, Mohd Ambri Channel length effect on the saturation current and the threshold voltages of CNTFET
description	Carbon nanotubes (CNTs) are such promising material in future microelectronic devices due to their great property in conductivity, mechanical strength and light weight. Field effect transistor (FET) has already come to its most maximum efficiency because of their reduced size leads to decrease in their capability in conducting electric. It is interested to embed ballistic electron transfer capability of CNTs on FET. In this study, direct growth method of CNTs was employed to attach it on FET electrodes with various terminal gaps. The results show that CNTFET has successfully fabricated, with averaged saturation currents always lowest at the channel size of 15μm. While their highest measured threshold voltage value is 4.291 V at 15 μm gap. This phenomenon is attributed to the change of CNTs’ chirality, which apparently changes the metallic type of CNTs to the semiconducting CNTs.
format	Conference or Workshop Item
author	Ani, Mohd Hanafi Muhamad Ali, Abu Hanifah Mohamed, Mohd Ambri
author_facet	Ani, Mohd Hanafi Muhamad Ali, Abu Hanifah Mohamed, Mohd Ambri
author_sort	Ani, Mohd Hanafi
title	Channel length effect on the saturation current and the threshold voltages of CNTFET
title_short	Channel length effect on the saturation current and the threshold voltages of CNTFET
title_full	Channel length effect on the saturation current and the threshold voltages of CNTFET
title_fullStr	Channel length effect on the saturation current and the threshold voltages of CNTFET
title_full_unstemmed	Channel length effect on the saturation current and the threshold voltages of CNTFET
title_sort	channel length effect on the saturation current and the threshold voltages of cntfet
publisher	IEEE
publishDate	2014
url	http://irep.iium.edu.my/40448/ http://irep.iium.edu.my/40448/ http://irep.iium.edu.my/40448/ http://irep.iium.edu.my/40448/1/Channel_length_effect_on_the_saturation_current_and_the_threshold_voltages_of_cntfet.pdf
first_indexed	2023-09-18T20:58:02Z
last_indexed	2023-09-18T20:58:02Z
_version_	1777410436226875392

Channel length effect on the saturation current and the threshold voltages of CNTFET

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