Electrical characterisation of highly doped triangular silicon nanowires
A top-down silicon nanowire fabrication using a combination of optical lithography and orientation dependent etching (ODE) has been developed using <100> Silicon-on Insulator (SOI) as the starting substrate. Initially, the samples were doped with phosphorus using the diffusion process resultin...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English English |
| Published: |
Trans Tech Publications Ltd., Switzerland
2014
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/38886/ http://irep.iium.edu.my/38886/ http://irep.iium.edu.my/38886/1/Electrical_Characterization_of_Highly_Doped_Triangular_Silicon_Nanowires.pdf http://irep.iium.edu.my/38886/4/38886_Electrical%20characterisation_Scopus.pdf |