Electrical characterisation of highly doped triangular silicon nanowires

A top-down silicon nanowire fabrication using a combination of optical lithography and orientation dependent etching (ODE) has been developed using <100> Silicon-on Insulator (SOI) as the starting substrate. Initially, the samples were doped with phosphorus using the diffusion process resultin...

Full description

Bibliographic Details
Main Authors:	Za'bah, Nor Farahidah, Kwa, Kelvin S. K., O’Neill, Anthony
Format:	Article
Language:	English English
Published:	Trans Tech Publications Ltd., Switzerland 2014
Subjects:	TA401 Materials of engineering and construction
Online Access:	http://irep.iium.edu.my/38886/ http://irep.iium.edu.my/38886/ http://irep.iium.edu.my/38886/1/Electrical_Characterization_of_Highly_Doped_Triangular_Silicon_Nanowires.pdf http://irep.iium.edu.my/38886/4/38886_Electrical%20characterisation_Scopus.pdf

id	iium-38886
recordtype	eprints
spelling	iium-388862017-08-22T02:12:58Z http://irep.iium.edu.my/38886/ Electrical characterisation of highly doped triangular silicon nanowires Za'bah, Nor Farahidah Kwa, Kelvin S. K. O’Neill, Anthony TA401 Materials of engineering and construction A top-down silicon nanowire fabrication using a combination of optical lithography and orientation dependent etching (ODE) has been developed using <100> Silicon-on Insulator (SOI) as the starting substrate. Initially, the samples were doped with phosphorus using the diffusion process resulting in carrier concentration of 2 X 10 18 cm-3. After the silicon nanowires were fabricated, they were measured using a dual configuration method which is similar to the four-point probe measurement technique to deduce its resistivity. The data obtained had suggested that the doping distribution in the silicon nanowires were lower and this may have been affected by the surface depletion effect. In addition, with respect to carrier mobility, the effective mobility of electrons extracted using the four-point probe data had demonstrated that the mobility of carriers in the silicon nanowire is comparable with the bulk mobility. This is most probably due to the fact that in this research, the quantum confinement effect on these nanowires is not significant. Trans Tech Publications Ltd., Switzerland 2014 Article PeerReviewed application/pdf en http://irep.iium.edu.my/38886/1/Electrical_Characterization_of_Highly_Doped_Triangular_Silicon_Nanowires.pdf application/pdf en http://irep.iium.edu.my/38886/4/38886_Electrical%20characterisation_Scopus.pdf Za'bah, Nor Farahidah and Kwa, Kelvin S. K. and O’Neill, Anthony (2014) Electrical characterisation of highly doped triangular silicon nanowires. Applied Mechanics and Materials, 660. pp. 168-172. ISSN 1660-9336 http://www.ttp.net/
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English
topic	TA401 Materials of engineering and construction
spellingShingle	TA401 Materials of engineering and construction Za'bah, Nor Farahidah Kwa, Kelvin S. K. O’Neill, Anthony Electrical characterisation of highly doped triangular silicon nanowires
description	A top-down silicon nanowire fabrication using a combination of optical lithography and orientation dependent etching (ODE) has been developed using <100> Silicon-on Insulator (SOI) as the starting substrate. Initially, the samples were doped with phosphorus using the diffusion process resulting in carrier concentration of 2 X 10 18 cm-3. After the silicon nanowires were fabricated, they were measured using a dual configuration method which is similar to the four-point probe measurement technique to deduce its resistivity. The data obtained had suggested that the doping distribution in the silicon nanowires were lower and this may have been affected by the surface depletion effect. In addition, with respect to carrier mobility, the effective mobility of electrons extracted using the four-point probe data had demonstrated that the mobility of carriers in the silicon nanowire is comparable with the bulk mobility. This is most probably due to the fact that in this research, the quantum confinement effect on these nanowires is not significant.
format	Article
author	Za'bah, Nor Farahidah Kwa, Kelvin S. K. O’Neill, Anthony
author_facet	Za'bah, Nor Farahidah Kwa, Kelvin S. K. O’Neill, Anthony
author_sort	Za'bah, Nor Farahidah
title	Electrical characterisation of highly doped triangular silicon nanowires
title_short	Electrical characterisation of highly doped triangular silicon nanowires
title_full	Electrical characterisation of highly doped triangular silicon nanowires
title_fullStr	Electrical characterisation of highly doped triangular silicon nanowires
title_full_unstemmed	Electrical characterisation of highly doped triangular silicon nanowires
title_sort	electrical characterisation of highly doped triangular silicon nanowires
publisher	Trans Tech Publications Ltd., Switzerland
publishDate	2014
url	http://irep.iium.edu.my/38886/ http://irep.iium.edu.my/38886/ http://irep.iium.edu.my/38886/1/Electrical_Characterization_of_Highly_Doped_Triangular_Silicon_Nanowires.pdf http://irep.iium.edu.my/38886/4/38886_Electrical%20characterisation_Scopus.pdf
first_indexed	2023-09-18T20:55:52Z
last_indexed	2023-09-18T20:55:52Z
_version_	1777410299321647104

Electrical characterisation of highly doped triangular silicon nanowires

Similar Items