A high linearity CMOS RF amplifier for power control module in RFID reader

Radio frequency identification (RFID) is the latest technology for automatic identification, which allows the transmission of a unique serial number wirelessly. Power control module of RFID reader is used to perform digital signal processing techniques and procedures over the received data from th...

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Main Authors:	Uddin, Md. Jassim., Ibrahimy, Muhammad Ibn, Nordin, Anis Nurashikin, Mohammad Ali, Masni
Format:	Conference or Workshop Item
Language:	English
Published:	2008
Subjects:	T Technology (General)
Online Access:	http://irep.iium.edu.my/36638/ http://irep.iium.edu.my/36638/ http://irep.iium.edu.my/36638/1/high%20linearty_36638.pdf

id	iium-36638
recordtype	eprints
spelling	iium-366382017-01-09T09:27:52Z http://irep.iium.edu.my/36638/ A high linearity CMOS RF amplifier for power control module in RFID reader Uddin, Md. Jassim. Ibrahimy, Muhammad Ibn Nordin, Anis Nurashikin Mohammad Ali, Masni T Technology (General) Radio frequency identification (RFID) is the latest technology for automatic identification, which allows the transmission of a unique serial number wirelessly. Power control module of RFID reader is used to perform digital signal processing techniques and procedures over the received data from the RFID readers. A high linearity CMOS RF (radio frequency) power amplifier has the advantage of being low-cost and easily integrated on chip. It has become the smart technology of choice for wireless devices (RFID readers). This work demonstrates a 3.3V single voltage self-biased 2.4GHz– 2.5GHz high linearity RF power amplifier for RFID applications. The proposed amplifier achieved 81.1 dB gain, output power at P1dB -4.0 dBm, 1-dB gain compression power with 10.0% power efficiency (PE) and 17.4% power-added efficiency (PAE). Furthermore, high linearity with 1.6dBc for IM3, -6.633dBm and -2.887dBm third-order intercept point IIP3 and OIP3 at frequency of 2.45GHz is also measured. The Adjacent Channel Power Ratio (ACPR) has been achieved -7.26dBc for input port and -1.0dBc for output port. The amplifier also exhibited very good isolation of 2.85dB, the insertion loss of 0.8dB and return loss of 9.94dB. Simulations were conducted using Mentor Graphic software tools. 2008 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/36638/1/high%20linearty_36638.pdf Uddin, Md. Jassim. and Ibrahimy, Muhammad Ibn and Nordin, Anis Nurashikin and Mohammad Ali, Masni (2008) A high linearity CMOS RF amplifier for power control module in RFID reader. In: 3rd International Conference on Mechatronics, ICOM’08, 18 - 20 December, 2008, Kuala Lumpur, Malaysia. http://www.iium.edu.my/ICOM/2008/images/stories/progbookicom_ver10.pdf
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English
topic	T Technology (General)
spellingShingle	T Technology (General) Uddin, Md. Jassim. Ibrahimy, Muhammad Ibn Nordin, Anis Nurashikin Mohammad Ali, Masni A high linearity CMOS RF amplifier for power control module in RFID reader
description	Radio frequency identification (RFID) is the latest technology for automatic identification, which allows the transmission of a unique serial number wirelessly. Power control module of RFID reader is used to perform digital signal processing techniques and procedures over the received data from the RFID readers. A high linearity CMOS RF (radio frequency) power amplifier has the advantage of being low-cost and easily integrated on chip. It has become the smart technology of choice for wireless devices (RFID readers). This work demonstrates a 3.3V single voltage self-biased 2.4GHz– 2.5GHz high linearity RF power amplifier for RFID applications. The proposed amplifier achieved 81.1 dB gain, output power at P1dB -4.0 dBm, 1-dB gain compression power with 10.0% power efficiency (PE) and 17.4% power-added efficiency (PAE). Furthermore, high linearity with 1.6dBc for IM3, -6.633dBm and -2.887dBm third-order intercept point IIP3 and OIP3 at frequency of 2.45GHz is also measured. The Adjacent Channel Power Ratio (ACPR) has been achieved -7.26dBc for input port and -1.0dBc for output port. The amplifier also exhibited very good isolation of 2.85dB, the insertion loss of 0.8dB and return loss of 9.94dB. Simulations were conducted using Mentor Graphic software tools.
format	Conference or Workshop Item
author	Uddin, Md. Jassim. Ibrahimy, Muhammad Ibn Nordin, Anis Nurashikin Mohammad Ali, Masni
author_facet	Uddin, Md. Jassim. Ibrahimy, Muhammad Ibn Nordin, Anis Nurashikin Mohammad Ali, Masni
author_sort	Uddin, Md. Jassim.
title	A high linearity CMOS RF amplifier for power control module in RFID reader
title_short	A high linearity CMOS RF amplifier for power control module in RFID reader
title_full	A high linearity CMOS RF amplifier for power control module in RFID reader
title_fullStr	A high linearity CMOS RF amplifier for power control module in RFID reader
title_full_unstemmed	A high linearity CMOS RF amplifier for power control module in RFID reader
title_sort	high linearity cmos rf amplifier for power control module in rfid reader
publishDate	2008
url	http://irep.iium.edu.my/36638/ http://irep.iium.edu.my/36638/ http://irep.iium.edu.my/36638/1/high%20linearty_36638.pdf
first_indexed	2023-09-18T20:52:29Z
last_indexed	2023-09-18T20:52:29Z
_version_	1777410087015415808

A high linearity CMOS RF amplifier for power control module in RFID reader

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