Electrical performances of commercial GaN and GaAs based optoelectronics under neutron irradiation
This paper aims to demonstrate the effects of displacement damage caused by high energetic neutron particle towards the electrical performances of gallium arsenide (GaAs) and gallium nitride (GaN) p-n based diodes. The investigations are carried out through current-voltage (I-V) and capacitance-volt...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2013
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/33632/ http://irep.iium.edu.my/33632/ http://irep.iium.edu.my/33632/ http://irep.iium.edu.my/33632/1/electrical_performances.pdf |