Neutron radiation effect on 2N2222 and NTE 123 NPN silicon bipolar junction transistors
This paper examines neutron radiation with PTS (Pneumatic Transfer System) effect on silicon NPN bipolar junction transistors (2N2222 and NTE 123) and analysis of the transistors in terms of electrical characterization such as current gain after neutron radiation. The key parameters are measured wit...
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iium-336282014-05-30T01:56:08Z http://irep.iium.edu.my/33628/ Neutron radiation effect on 2N2222 and NTE 123 NPN silicon bipolar junction transistors Oo, Myo Min Alang Md Rashid, Nahrul Khair Abdul Karim, Julia Mohmamed Zin, Mohamed Rawi Hasbullah, Nurul Fadzlin TK9001 Nuclear engineering. Atomic power This paper examines neutron radiation with PTS (Pneumatic Transfer System) effect on silicon NPN bipolar junction transistors (2N2222 and NTE 123) and analysis of the transistors in terms of electrical characterization such as current gain after neutron radiation. The key parameters are measured with Keithley 4200SCS. Experiment results show that the current gain degradation of the transistors is very sensitive to neutron radiation. The neutron radiation can cause displacement damage in the bulk layer of the transistor structure. The current degradation is believed to be governed by increasing recombination current between the base and emitter depletion region. IOP science 2013-12 Article PeerReviewed application/pdf en http://irep.iium.edu.my/33628/3/neutron.pdf Oo, Myo Min and Alang Md Rashid, Nahrul Khair and Abdul Karim, Julia and Mohmamed Zin, Mohamed Rawi and Hasbullah, Nurul Fadzlin (2013) Neutron radiation effect on 2N2222 and NTE 123 NPN silicon bipolar junction transistors. IOP Conf. Ser.: Mater. Sci. Eng. 53 , 53. 012013-1. ISSN doi:10.1088/1757-899X/53/1/012013 http://irep.iium.edu.my/33628/2/012013;jsessionid=D3043C95737FF0938FEA42FB4C22A44A.c3 doi:10.1088/1757-899X/53/1/012013 |
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TK9001 Nuclear engineering. Atomic power |
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TK9001 Nuclear engineering. Atomic power Oo, Myo Min Alang Md Rashid, Nahrul Khair Abdul Karim, Julia Mohmamed Zin, Mohamed Rawi Hasbullah, Nurul Fadzlin Neutron radiation effect on 2N2222 and NTE 123 NPN silicon bipolar junction transistors |
description |
This paper examines neutron radiation with PTS (Pneumatic Transfer System) effect on silicon NPN bipolar junction transistors (2N2222 and NTE 123) and analysis of the transistors in terms of electrical characterization such as current gain after neutron radiation. The key parameters are measured with Keithley 4200SCS. Experiment results show that the current gain degradation of the transistors is very sensitive to neutron radiation. The neutron radiation can cause displacement damage in the bulk layer of the transistor structure. The current degradation is believed to be governed by increasing recombination current between the base and emitter depletion region. |
format |
Article |
author |
Oo, Myo Min Alang Md Rashid, Nahrul Khair Abdul Karim, Julia Mohmamed Zin, Mohamed Rawi Hasbullah, Nurul Fadzlin |
author_facet |
Oo, Myo Min Alang Md Rashid, Nahrul Khair Abdul Karim, Julia Mohmamed Zin, Mohamed Rawi Hasbullah, Nurul Fadzlin |
author_sort |
Oo, Myo Min |
title |
Neutron radiation effect on 2N2222 and NTE 123 NPN silicon bipolar junction transistors |
title_short |
Neutron radiation effect on 2N2222 and NTE 123 NPN silicon bipolar junction transistors |
title_full |
Neutron radiation effect on 2N2222 and NTE 123 NPN silicon bipolar junction transistors |
title_fullStr |
Neutron radiation effect on 2N2222 and NTE 123 NPN silicon bipolar junction transistors |
title_full_unstemmed |
Neutron radiation effect on 2N2222 and NTE 123 NPN silicon bipolar junction transistors |
title_sort |
neutron radiation effect on 2n2222 and nte 123 npn silicon bipolar junction transistors |
publisher |
IOP science |
publishDate |
2013 |
url |
http://irep.iium.edu.my/33628/ http://irep.iium.edu.my/33628/ http://irep.iium.edu.my/33628/ http://irep.iium.edu.my/33628/3/neutron.pdf |
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2023-09-18T20:48:36Z |
last_indexed |
2023-09-18T20:48:36Z |
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