0.35μm SPDT RF CMOS switch for wireless communication application

In recent years, wireless communication particularly in the front-end transceiver architecture has increased its functionality. This trend is continuously expanding and of particular is reconfigurable radio frequency (RF) front-end. A multi-band single chip architecture which consists of an array o...

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Main Authors:	Bambang Soeroso, Iksannurazmi, Nordin, Anis Nurashikin, Alam, A. H. M. Zahirul
Format:	Conference or Workshop Item
Language:	English
Published:	2013
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://irep.iium.edu.my/32772/ http://irep.iium.edu.my/32772/ http://irep.iium.edu.my/32772/1/31.pdf

id	iium-32772
recordtype	eprints
spelling	iium-327722013-11-15T03:11:13Z http://irep.iium.edu.my/32772/ 0.35μm SPDT RF CMOS switch for wireless communication application Bambang Soeroso, Iksannurazmi Nordin, Anis Nurashikin Alam, A. H. M. Zahirul TK Electrical engineering. Electronics Nuclear engineering In recent years, wireless communication particularly in the front-end transceiver architecture has increased its functionality. This trend is continuously expanding and of particular is reconfigurable radio frequency (RF) front-end. A multi-band single chip architecture which consists of an array of switches and filters could simplify the complexity of the current superheterodyne architecture. In this paper, the design of a Single Pole Double Throw (SPDT) switch using 0.35μm Complementary Metal Oxide Semiconductor (CMOS) technology is discussed. The SPDT RF CMOS switch was then simulated in the range of frequency of 0-2GHz. At 2 GHz, the switch exhibits insertion loss of 1.153dB, isolation of 21.24dB, P1dB of 21.73dBm and IIP3 of 26.02dBm. Critical RF T/R switch characteristic such as insertion loss, isolation, power 1dB compression point and third order intercept point, IIP3 is discussed and compared with other type of switch designs. Pre and post layout simulation of the SPDT RF CMOS switch are also discussed to analyze the effect of parasitic capacitance between components’ interconnection. 2013-10 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/32772/1/31.pdf Bambang Soeroso, Iksannurazmi and Nordin, Anis Nurashikin and Alam, A. H. M. Zahirul (2013) 0.35μm SPDT RF CMOS switch for wireless communication application. In: 2013 IEEE Regional Symposium on Micro and Nano Electronics (RSM 2013), 25-27 October 2013, Langkawi, Malaysia. http://www.ieeemalaysia-eds.org/rsm2013/index.php?option=com_content&view=article&id=46:2013-ieee-regional-symposium-on-micro-and-nanoelectronics&Itemid=28
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English
topic	TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	TK Electrical engineering. Electronics Nuclear engineering Bambang Soeroso, Iksannurazmi Nordin, Anis Nurashikin Alam, A. H. M. Zahirul 0.35μm SPDT RF CMOS switch for wireless communication application
description	In recent years, wireless communication particularly in the front-end transceiver architecture has increased its functionality. This trend is continuously expanding and of particular is reconfigurable radio frequency (RF) front-end. A multi-band single chip architecture which consists of an array of switches and filters could simplify the complexity of the current superheterodyne architecture. In this paper, the design of a Single Pole Double Throw (SPDT) switch using 0.35μm Complementary Metal Oxide Semiconductor (CMOS) technology is discussed. The SPDT RF CMOS switch was then simulated in the range of frequency of 0-2GHz. At 2 GHz, the switch exhibits insertion loss of 1.153dB, isolation of 21.24dB, P1dB of 21.73dBm and IIP3 of 26.02dBm. Critical RF T/R switch characteristic such as insertion loss, isolation, power 1dB compression point and third order intercept point, IIP3 is discussed and compared with other type of switch designs. Pre and post layout simulation of the SPDT RF CMOS switch are also discussed to analyze the effect of parasitic capacitance between components’ interconnection.
format	Conference or Workshop Item
author	Bambang Soeroso, Iksannurazmi Nordin, Anis Nurashikin Alam, A. H. M. Zahirul
author_facet	Bambang Soeroso, Iksannurazmi Nordin, Anis Nurashikin Alam, A. H. M. Zahirul
author_sort	Bambang Soeroso, Iksannurazmi
title	0.35μm SPDT RF CMOS switch for wireless communication application
title_short	0.35μm SPDT RF CMOS switch for wireless communication application
title_full	0.35μm SPDT RF CMOS switch for wireless communication application
title_fullStr	0.35μm SPDT RF CMOS switch for wireless communication application
title_full_unstemmed	0.35μm SPDT RF CMOS switch for wireless communication application
title_sort	0.35μm spdt rf cmos switch for wireless communication application
publishDate	2013
url	http://irep.iium.edu.my/32772/ http://irep.iium.edu.my/32772/ http://irep.iium.edu.my/32772/1/31.pdf
first_indexed	2023-09-18T20:47:18Z
last_indexed	2023-09-18T20:47:18Z
_version_	1777409760476266496

0.35μm SPDT RF CMOS switch for wireless communication application

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