Device characteristics of carbon nanotube transistor fabricated by direct growth method

We have fabricated carbon nanotube �CNT� ﬁeld-effect transistors �FETs� by direct growth of single-wall CNTs between the source and drain electrodes, and investigated their device characteristics. The FETs show ambipolar operation. The temperature and bias voltage dependence of device characteris...

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Main Authors:	Inami, Nobuhito, Mohamed, Mohd Ambri, Shikoh, Eiji, Fujiwara, Akihiko
Format:	Article
Language:	English
Published:	American Institute of Physics Inc. 2008
Subjects:	QC Physics TA165 Engineering instruments, meters, etc. Industrial instrumentation TK7885 Computer engineering
Online Access:	http://irep.iium.edu.my/29896/ http://irep.iium.edu.my/29896/ http://irep.iium.edu.my/29896/ http://irep.iium.edu.my/29896/1/ambri_apl.pdf

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recordtype	eprints
spelling	iium-298962013-07-25T08:13:58Z http://irep.iium.edu.my/29896/ Device characteristics of carbon nanotube transistor fabricated by direct growth method Inami, Nobuhito Mohamed, Mohd Ambri Shikoh, Eiji Fujiwara, Akihiko QC Physics TA165 Engineering instruments, meters, etc. Industrial instrumentation TK7885 Computer engineering We have fabricated carbon nanotube �CNT� ﬁeld-effect transistors �FETs� by direct growth of single-wall CNTs between the source and drain electrodes, and investigated their device characteristics. The FETs show ambipolar operation. The temperature and bias voltage dependence of device characteristics are consistent with device operation of the Schottky-type FET. The carrier injection barrier heights for both the electron and hole carriers show small values of 17– 74 meV, without any additional speciﬁc treatment after device fabrication. American Institute of Physics Inc. 2008-06-18 Article PeerReviewed application/pdf en http://irep.iium.edu.my/29896/1/ambri_apl.pdf Inami, Nobuhito and Mohamed, Mohd Ambri and Shikoh, Eiji and Fujiwara, Akihiko (2008) Device characteristics of carbon nanotube transistor fabricated by direct growth method. Applied Physics Letters, 92 (24). ISSN 0003-6951 http://apl.aip.org/resource/1/applab/v92/i24/p243115_s1 10.1063/1.2949075
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English
topic	QC Physics TA165 Engineering instruments, meters, etc. Industrial instrumentation TK7885 Computer engineering
spellingShingle	QC Physics TA165 Engineering instruments, meters, etc. Industrial instrumentation TK7885 Computer engineering Inami, Nobuhito Mohamed, Mohd Ambri Shikoh, Eiji Fujiwara, Akihiko Device characteristics of carbon nanotube transistor fabricated by direct growth method
description	We have fabricated carbon nanotube �CNT� ﬁeld-effect transistors �FETs� by direct growth of single-wall CNTs between the source and drain electrodes, and investigated their device characteristics. The FETs show ambipolar operation. The temperature and bias voltage dependence of device characteristics are consistent with device operation of the Schottky-type FET. The carrier injection barrier heights for both the electron and hole carriers show small values of 17– 74 meV, without any additional speciﬁc treatment after device fabrication.
format	Article
author	Inami, Nobuhito Mohamed, Mohd Ambri Shikoh, Eiji Fujiwara, Akihiko
author_facet	Inami, Nobuhito Mohamed, Mohd Ambri Shikoh, Eiji Fujiwara, Akihiko
author_sort	Inami, Nobuhito
title	Device characteristics of carbon nanotube transistor fabricated by direct growth method
title_short	Device characteristics of carbon nanotube transistor fabricated by direct growth method
title_full	Device characteristics of carbon nanotube transistor fabricated by direct growth method
title_fullStr	Device characteristics of carbon nanotube transistor fabricated by direct growth method
title_full_unstemmed	Device characteristics of carbon nanotube transistor fabricated by direct growth method
title_sort	device characteristics of carbon nanotube transistor fabricated by direct growth method
publisher	American Institute of Physics Inc.
publishDate	2008
url	http://irep.iium.edu.my/29896/ http://irep.iium.edu.my/29896/ http://irep.iium.edu.my/29896/ http://irep.iium.edu.my/29896/1/ambri_apl.pdf
first_indexed	2023-09-18T20:43:53Z
last_indexed	2023-09-18T20:43:53Z
_version_	1777409546015211520

Device characteristics of carbon nanotube transistor fabricated by direct growth method

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