Device characteristics of carbon nanotube transistor fabricated by direct growth method
We have fabricated carbon nanotube �CNT� field-effect transistors �FETs� by direct growth of single-wall CNTs between the source and drain electrodes, and investigated their device characteristics. The FETs show ambipolar operation. The temperature and bias voltage dependence of device characteris...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Institute of Physics Inc.
2008
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/29896/ http://irep.iium.edu.my/29896/ http://irep.iium.edu.my/29896/ http://irep.iium.edu.my/29896/1/ambri_apl.pdf |
| Summary: | We have fabricated carbon nanotube �CNT� field-effect transistors �FETs� by direct growth of
single-wall CNTs between the source and drain electrodes, and investigated their device
characteristics. The FETs show ambipolar operation. The temperature and bias voltage dependence
of device characteristics are consistent with device operation of the Schottky-type FET. The carrier
injection barrier heights for both the electron and hole carriers show small values of 17– 74 meV,
without any additional specific treatment after device fabrication. |
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