Inami, N., Mohamed, M. A., Shikoh, E., & Fujiwara, A. (2008). Device characteristics of carbon nanotube transistor fabricated by direct growth method. American Institute of Physics Inc.
Chicago Style (17th ed.) CitationInami, Nobuhito, Mohd Ambri Mohamed, Eiji Shikoh, and Akihiko Fujiwara. Device Characteristics of Carbon Nanotube Transistor Fabricated by Direct Growth Method. American Institute of Physics Inc, 2008.
MLA (8th ed.) CitationInami, Nobuhito, et al. Device Characteristics of Carbon Nanotube Transistor Fabricated by Direct Growth Method. American Institute of Physics Inc, 2008.
Warning: These citations may not always be 100% accurate.