Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature-grown GaAs layers

Magnetic properties resulting from localized spins associated with antisite arsenic ions AsGa+ in Be-doped low-temperature-grown GaAs (LT-GaAs) layers were studied by measuring the magnetization of lift-off samples. With fast cooling, the magnetization of samples at 1.8 K becomes significantly lower...

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Main Authors:	Mohamed, Mohd Ambri, Tien Lam, Pham, Bae, K. W., Otsuka, Nobuo
Format:	Article
Language:	English
Published:	American Institute of Physics Inc. 2011
Subjects:	QC Physics QD Chemistry TK7885 Computer engineering
Online Access:	http://irep.iium.edu.my/29874/ http://irep.iium.edu.my/29874/ http://irep.iium.edu.my/29874/ http://irep.iium.edu.my/29874/1/JApplPhys_110_123716.pdf

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spelling	iium-298742015-09-09T03:05:16Z http://irep.iium.edu.my/29874/ Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature-grown GaAs layers Mohamed, Mohd Ambri Tien Lam, Pham Bae, K. W. Otsuka, Nobuo QC Physics QD Chemistry TK7885 Computer engineering Magnetic properties resulting from localized spins associated with antisite arsenic ions AsGa+ in Be-doped low-temperature-grown GaAs (LT-GaAs) layers were studied by measuring the magnetization of lift-off samples. With fast cooling, the magnetization of samples at 1.8 K becomes significantly lower than that expected from Curie-type paramagnetism in the range of the applied field to 7 T, and a transition from low magnetization to the magnetization of paramagnetism occurs upon the heating of samples to 4.5 K. With slow cooling, on the other hand, samples have a paramagnetic temperature dependence throughout the measurement-temperature range. The magnetization was found to decrease monotonically when a sample was kept at a fixed low temperature. These observations are explained by the cooperative transition of electron states of AsGa defects, which is closely related to the normal-metastable state transition of EL2 defects in semi-insulating GaAs. The results of the magnetization measurements in the present study suggest that AsGa+ ions are spontaneously displaced at low temperature without photoexcitation in Be-doped LT-GaAs. The similarity of the transition observed in this system to the normal-metastable state transition of the EL2 defect was also suggested by first-principle calculations of the electron state of an AsGa defect with a doped Be atom American Institute of Physics Inc. 2011-12-15 Article PeerReviewed application/pdf en http://irep.iium.edu.my/29874/1/JApplPhys_110_123716.pdf Mohamed, Mohd Ambri and Tien Lam, Pham and Bae, K. W. and Otsuka, Nobuo (2011) Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature-grown GaAs layers. Journal of Applied Physics, 110 (12). ISSN 0021-8979 http://jap.aip.org/resource/1/japiau/v110/i12/p123716_s1 10.1063/1.3671059
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English
topic	QC Physics QD Chemistry TK7885 Computer engineering
spellingShingle	QC Physics QD Chemistry TK7885 Computer engineering Mohamed, Mohd Ambri Tien Lam, Pham Bae, K. W. Otsuka, Nobuo Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature-grown GaAs layers
description	Magnetic properties resulting from localized spins associated with antisite arsenic ions AsGa+ in Be-doped low-temperature-grown GaAs (LT-GaAs) layers were studied by measuring the magnetization of lift-off samples. With fast cooling, the magnetization of samples at 1.8 K becomes significantly lower than that expected from Curie-type paramagnetism in the range of the applied field to 7 T, and a transition from low magnetization to the magnetization of paramagnetism occurs upon the heating of samples to 4.5 K. With slow cooling, on the other hand, samples have a paramagnetic temperature dependence throughout the measurement-temperature range. The magnetization was found to decrease monotonically when a sample was kept at a fixed low temperature. These observations are explained by the cooperative transition of electron states of AsGa defects, which is closely related to the normal-metastable state transition of EL2 defects in semi-insulating GaAs. The results of the magnetization measurements in the present study suggest that AsGa+ ions are spontaneously displaced at low temperature without photoexcitation in Be-doped LT-GaAs. The similarity of the transition observed in this system to the normal-metastable state transition of the EL2 defect was also suggested by first-principle calculations of the electron state of an AsGa defect with a doped Be atom
format	Article
author	Mohamed, Mohd Ambri Tien Lam, Pham Bae, K. W. Otsuka, Nobuo
author_facet	Mohamed, Mohd Ambri Tien Lam, Pham Bae, K. W. Otsuka, Nobuo
author_sort	Mohamed, Mohd Ambri
title	Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature-grown GaAs layers
title_short	Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature-grown GaAs layers
title_full	Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature-grown GaAs layers
title_fullStr	Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature-grown GaAs layers
title_full_unstemmed	Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature-grown GaAs layers
title_sort	cooperative transition of electronic states of antisite as defects in be-doped low-temperature-grown gaas layers
publisher	American Institute of Physics Inc.
publishDate	2011
url	http://irep.iium.edu.my/29874/ http://irep.iium.edu.my/29874/ http://irep.iium.edu.my/29874/ http://irep.iium.edu.my/29874/1/JApplPhys_110_123716.pdf
first_indexed	2023-09-18T20:43:52Z
last_indexed	2023-09-18T20:43:52Z
_version_	1777409544237875200

Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature-grown GaAs layers

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