Non-equilibrium critical point in Be-doped low-temperature-grown GaAs

Non-equilibrium critical point in Be-doped low-temperature-grown GaAs

We studied the transition process of antisite arsenic defects in Be-doped low-temperature-grown GaAs layers by measuring the magnetization. This material exhibits bistability at non-equilibrium; at a fixed temperature in a fixed magnetic field a sample relaxes towards two different states, depending...

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Main Authors: Mohamed, Mohd Ambri, Pham, Tien Lam, N., Otsuka
Format: Article
Language:English
Published: American Institute of Physics 2013
Subjects:
QC Physics
Online Access:http://irep.iium.edu.my/29871/
http://irep.iium.edu.my/29871/
http://irep.iium.edu.my/29871/
http://irep.iium.edu.my/29871/1/original_copy_manu_JAP2012.pdf
id iium-29871
recordtype eprints
spelling iium-298712013-06-07T06:58:20Z http://irep.iium.edu.my/29871/ Non-equilibrium critical point in Be-doped low-temperature-grown GaAs Mohamed, Mohd Ambri Pham, Tien Lam N., Otsuka QC Physics We studied the transition process of antisite arsenic defects in Be-doped low-temperature-grown GaAs layers by measuring the magnetization. This material exhibits bistability at non-equilibrium; at a fixed temperature in a fixed magnetic field a sample relaxes towards two different states, depending on the preceding cooling process. We observed anomalously large magnetization fluctuations in macroscopic samples during the transition from bistability to monostability with gradual change of the temperature. Slowing down of the relaxation of the magnetization is observed as a sample approaches the transition into monostability. Large fluctuations observed from a two-piece sample exhibit intermittent bursts by high-pass filtering and follow a generalized Gumbel probability density distribution. These observations suggest a possibility of the occurrence of a non-equilibrium critical point in this material. Microscopic processes underlying the observed phenomena are discussed with results of first-principles calculations of strain fields. VC 2013 American Institute of Physics. American Institute of Physics 2013-02-04 Article PeerReviewed application/pdf en http://irep.iium.edu.my/29871/1/original_copy_manu_JAP2012.pdf Mohamed, Mohd Ambri and Pham, Tien Lam and N., Otsuka (2013) Non-equilibrium critical point in Be-doped low-temperature-grown GaAs. Journal of Applied Physics, 113 (5). 053504 (1)-053504 (7). ISSN 0021-8979 http://dx.doi.org/10.1063/1.4790313 10.1063/1.4790313
repository_type Digital Repository
institution_category Local University
institution International Islamic University Malaysia
building IIUM Repository
collection Online Access
language English
topic QC Physics
spellingShingle QC Physics
Mohamed, Mohd Ambri
Pham, Tien Lam
N., Otsuka
Non-equilibrium critical point in Be-doped low-temperature-grown GaAs
description We studied the transition process of antisite arsenic defects in Be-doped low-temperature-grown GaAs layers by measuring the magnetization. This material exhibits bistability at non-equilibrium; at a fixed temperature in a fixed magnetic field a sample relaxes towards two different states, depending on the preceding cooling process. We observed anomalously large magnetization fluctuations in macroscopic samples during the transition from bistability to monostability with gradual change of the temperature. Slowing down of the relaxation of the magnetization is observed as a sample approaches the transition into monostability. Large fluctuations observed from a two-piece sample exhibit intermittent bursts by high-pass filtering and follow a generalized Gumbel probability density distribution. These observations suggest a possibility of the occurrence of a non-equilibrium critical point in this material. Microscopic processes underlying the observed phenomena are discussed with results of first-principles calculations of strain fields. VC 2013 American Institute of Physics.
format Article
author Mohamed, Mohd Ambri
Pham, Tien Lam
N., Otsuka
author_facet Mohamed, Mohd Ambri
Pham, Tien Lam
N., Otsuka
author_sort Mohamed, Mohd Ambri
title Non-equilibrium critical point in Be-doped low-temperature-grown GaAs
title_short Non-equilibrium critical point in Be-doped low-temperature-grown GaAs
title_full Non-equilibrium critical point in Be-doped low-temperature-grown GaAs
title_fullStr Non-equilibrium critical point in Be-doped low-temperature-grown GaAs
title_full_unstemmed Non-equilibrium critical point in Be-doped low-temperature-grown GaAs
title_sort non-equilibrium critical point in be-doped low-temperature-grown gaas
publisher American Institute of Physics
publishDate 2013
url http://irep.iium.edu.my/29871/
http://irep.iium.edu.my/29871/
http://irep.iium.edu.my/29871/
http://irep.iium.edu.my/29871/1/original_copy_manu_JAP2012.pdf
first_indexed 2023-09-18T20:43:51Z
last_indexed 2023-09-18T20:43:51Z
_version_ 1777409544082685952

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