Effects on the Forward Bias Characteristics of Neutron Irradiated Si and GaAs Diodes

The aim of this study is to investigate the effects on forward bias characteristics of neutron radiation on various commercially available silicon and GaAs diodes. The diodes were irradiated using the Pneumatic Transfer System (PTS) facility in Malaysian Nuclear Agency with neutron fluences up to 10...

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Main Authors:	Che Omar, Nuurul Iffah, Alang Md Rashid, Nahrul Khair, Abdullah, J., Abdul Karim, J., Hasbullah, Nurul Fadzlin
Format:	Article
Language:	English
Published:	Maxwell Science Publications 2012
Subjects:	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:	http://irep.iium.edu.my/28989/ http://irep.iium.edu.my/28989/ http://irep.iium.edu.my/28989/1/Effects_on_the_Forward_Bias_Characteristics_of_Neutron.pdf

id	iium-28989
recordtype	eprints
spelling	iium-289892016-11-23T01:04:56Z http://irep.iium.edu.my/28989/ Effects on the Forward Bias Characteristics of Neutron Irradiated Si and GaAs Diodes Che Omar, Nuurul Iffah Alang Md Rashid, Nahrul Khair Abdullah, J. Abdul Karim, J. Hasbullah, Nurul Fadzlin TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices The aim of this study is to investigate the effects on forward bias characteristics of neutron radiation on various commercially available silicon and GaAs diodes. The diodes were irradiated using the Pneumatic Transfer System (PTS) facility in Malaysian Nuclear Agency with neutron fluences up to 1012 neutron/cm2.s for an exposure time of 1, 3 and 5 min. The Forward Bias (FB) current-voltage (I-V) characteristics and doping profiles of the diodes were recorded before and after irradiation. It is observed that the FB leakage current of the silicon and GaAs diodes increases after irradiation. The increase in leakage current is interpreted as being due to an increase of generation-recombination traps created in the band gap after radiation. The doping concentration of GaAs diodes in FB is observed to decrease while the series resistance increases after irradiation which may be attributed to changes in doping concentration due to carrier removal by the defects produced. Maxwell Science Publications 2012 Article PeerReviewed application/pdf en http://irep.iium.edu.my/28989/1/Effects_on_the_Forward_Bias_Characteristics_of_Neutron.pdf Che Omar, Nuurul Iffah and Alang Md Rashid, Nahrul Khair and Abdullah, J. and Abdul Karim, J. and Hasbullah, Nurul Fadzlin (2012) Effects on the Forward Bias Characteristics of Neutron Irradiated Si and GaAs Diodes. Research Journal of Applied Sciences, Engineering and Technology, 4 (23). pp. 5079-5083. ISSN 2040-7459 E-ISSN 2040-7467 http://www.doaj.org/doaj?func=abstract&id=1155381
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English
topic	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
spellingShingle	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Che Omar, Nuurul Iffah Alang Md Rashid, Nahrul Khair Abdullah, J. Abdul Karim, J. Hasbullah, Nurul Fadzlin Effects on the Forward Bias Characteristics of Neutron Irradiated Si and GaAs Diodes
description	The aim of this study is to investigate the effects on forward bias characteristics of neutron radiation on various commercially available silicon and GaAs diodes. The diodes were irradiated using the Pneumatic Transfer System (PTS) facility in Malaysian Nuclear Agency with neutron fluences up to 1012 neutron/cm2.s for an exposure time of 1, 3 and 5 min. The Forward Bias (FB) current-voltage (I-V) characteristics and doping profiles of the diodes were recorded before and after irradiation. It is observed that the FB leakage current of the silicon and GaAs diodes increases after irradiation. The increase in leakage current is interpreted as being due to an increase of generation-recombination traps created in the band gap after radiation. The doping concentration of GaAs diodes in FB is observed to decrease while the series resistance increases after irradiation which may be attributed to changes in doping concentration due to carrier removal by the defects produced.
format	Article
author	Che Omar, Nuurul Iffah Alang Md Rashid, Nahrul Khair Abdullah, J. Abdul Karim, J. Hasbullah, Nurul Fadzlin
author_facet	Che Omar, Nuurul Iffah Alang Md Rashid, Nahrul Khair Abdullah, J. Abdul Karim, J. Hasbullah, Nurul Fadzlin
author_sort	Che Omar, Nuurul Iffah
title	Effects on the Forward Bias Characteristics of Neutron Irradiated Si and GaAs Diodes
title_short	Effects on the Forward Bias Characteristics of Neutron Irradiated Si and GaAs Diodes
title_full	Effects on the Forward Bias Characteristics of Neutron Irradiated Si and GaAs Diodes
title_fullStr	Effects on the Forward Bias Characteristics of Neutron Irradiated Si and GaAs Diodes
title_full_unstemmed	Effects on the Forward Bias Characteristics of Neutron Irradiated Si and GaAs Diodes
title_sort	effects on the forward bias characteristics of neutron irradiated si and gaas diodes
publisher	Maxwell Science Publications
publishDate	2012
url	http://irep.iium.edu.my/28989/ http://irep.iium.edu.my/28989/ http://irep.iium.edu.my/28989/1/Effects_on_the_Forward_Bias_Characteristics_of_Neutron.pdf
first_indexed	2023-09-18T20:42:34Z
last_indexed	2023-09-18T20:42:34Z
_version_	1777409463250059264

Effects on the Forward Bias Characteristics of Neutron Irradiated Si and GaAs Diodes

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