Trench DMOS interface trap characterization by three-terminal charge pumping measurement

The applicability of three-terminal charge pumping (3T-CP) technique to characterize the gate-oxide/Silicon (SiO2/Si) interface in a 45 nm thick SiO2, n-type trench Double-diffused Metal–Oxide–Semiconductor (DMOS) technology transistors is studied. The charge pumping current for process control moni...

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Main Authors:	Izzudin , Ismah, Kamaruddin , Mohd. Hanif, Nordin, Anis Nurashikin, Soin, Norhayati
Format:	Article
Language:	English
Published:	Elsevier 2012
Subjects:	TK7885 Computer engineering
Online Access:	http://irep.iium.edu.my/27128/ http://irep.iium.edu.my/27128/ http://irep.iium.edu.my/27128/1/S0026271412003150

id	iium-27128
recordtype	eprints
spelling	iium-271282012-11-29T00:00:51Z http://irep.iium.edu.my/27128/ Trench DMOS interface trap characterization by three-terminal charge pumping measurement Izzudin , Ismah Kamaruddin , Mohd. Hanif Nordin, Anis Nurashikin Soin, Norhayati TK7885 Computer engineering The applicability of three-terminal charge pumping (3T-CP) technique to characterize the gate-oxide/Silicon (SiO2/Si) interface in a 45 nm thick SiO2, n-type trench Double-diffused Metal–Oxide–Semiconductor (DMOS) technology transistors is studied. The charge pumping current for process control monitor kerf (PCM-Kerf) structures were successfully measured during experiments. The plot shapes and trends are in agreement with previously reported work. A correlation study was performed with the numerical value of charge pumping current and experimental results on PCM-Kerf for a planar DMOS with 4 terminals. The charge pumping measurements showed very high source–drain current after approximately −2 V Vbase value. Elsevier 2012-12 Article PeerReviewed application/pdf en http://irep.iium.edu.my/27128/1/S0026271412003150 Izzudin , Ismah and Kamaruddin , Mohd. Hanif and Nordin, Anis Nurashikin and Soin, Norhayati (2012) Trench DMOS interface trap characterization by three-terminal charge pumping measurement. Microelectronics Reliability, 52 (12). pp. 2914-2919. http://www.sciencedirect.com/science/article/pii/S0026271412003150
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English
topic	TK7885 Computer engineering
spellingShingle	TK7885 Computer engineering Izzudin , Ismah Kamaruddin , Mohd. Hanif Nordin, Anis Nurashikin Soin, Norhayati Trench DMOS interface trap characterization by three-terminal charge pumping measurement
description	The applicability of three-terminal charge pumping (3T-CP) technique to characterize the gate-oxide/Silicon (SiO2/Si) interface in a 45 nm thick SiO2, n-type trench Double-diffused Metal–Oxide–Semiconductor (DMOS) technology transistors is studied. The charge pumping current for process control monitor kerf (PCM-Kerf) structures were successfully measured during experiments. The plot shapes and trends are in agreement with previously reported work. A correlation study was performed with the numerical value of charge pumping current and experimental results on PCM-Kerf for a planar DMOS with 4 terminals. The charge pumping measurements showed very high source–drain current after approximately −2 V Vbase value.
format	Article
author	Izzudin , Ismah Kamaruddin , Mohd. Hanif Nordin, Anis Nurashikin Soin, Norhayati
author_facet	Izzudin , Ismah Kamaruddin , Mohd. Hanif Nordin, Anis Nurashikin Soin, Norhayati
author_sort	Izzudin , Ismah
title	Trench DMOS interface trap characterization by three-terminal charge pumping measurement
title_short	Trench DMOS interface trap characterization by three-terminal charge pumping measurement
title_full	Trench DMOS interface trap characterization by three-terminal charge pumping measurement
title_fullStr	Trench DMOS interface trap characterization by three-terminal charge pumping measurement
title_full_unstemmed	Trench DMOS interface trap characterization by three-terminal charge pumping measurement
title_sort	trench dmos interface trap characterization by three-terminal charge pumping measurement
publisher	Elsevier
publishDate	2012
url	http://irep.iium.edu.my/27128/ http://irep.iium.edu.my/27128/ http://irep.iium.edu.my/27128/1/S0026271412003150
first_indexed	2023-09-18T20:40:20Z
last_indexed	2023-09-18T20:40:20Z
_version_	1777409322450419712

Trench DMOS interface trap characterization by three-terminal charge pumping measurement

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