Surface integrity and removal rate of silicon sputtered with focused ion beam
This paper investigates the micromachinability of (100) silicon by focused gallium ion beam sputtering at normal incident angle. Effect of the beam parameters (dose, aperture and accelerating voltage) and the beam scanning parameters (pixel spacing, dwell time, retracing time and scanning type) on t...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor and Francis Inc.
2001
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/27113/ http://irep.iium.edu.my/27113/ http://irep.iium.edu.my/27113/ http://irep.iium.edu.my/27113/1/025_MST_2001_5%282%29_239-254.pdf |