Focused ion beam machining of silicon

This paper optimizes the parameters of a focused gallium ion beam system for the micromachining of single-crystal silicon. The effect of the parameters on the surface integrity and material removal rate (MRR) were studied. The surface integrity and machined features were measured with a scanning pro...

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Main Authors:	Hung, NguyenPhu, Fu, Yongqi, Ali, Mohammad Yeakub
Format:	Article
Language:	English
Published:	Elsevier BV 2002
Subjects:	TS Manufactures
Online Access:	http://irep.iium.edu.my/27110/ http://irep.iium.edu.my/27110/ http://irep.iium.edu.my/27110/ http://irep.iium.edu.my/27110/1/022_JMPT_127%282%29_256-260.pdf

id	iium-27110
recordtype	eprints
spelling	iium-271102013-07-23T07:22:34Z http://irep.iium.edu.my/27110/ Focused ion beam machining of silicon Hung, NguyenPhu Fu, Yongqi Ali, Mohammad Yeakub TS Manufactures This paper optimizes the parameters of a focused gallium ion beam system for the micromachining of single-crystal silicon. The effect of the parameters on the surface integrity and material removal rate (MRR) were studied. The surface integrity and machined features were measured with a scanning probe microscope. Statistical models were established to predict the sputtered depths and MRRs. The sputtering depth increased with higher accelerating voltage, more ion dose, shorter pixel spacing, and longer dwell time. Similar trends were found for predicting the MRR. A surface roughness in the range of 2-5 nm was achieved, and was found to be linearly dependent on the pixel spacing. © 2002 Elsevier Science B.V. All rights reserved. Elsevier BV 2002 Article PeerReviewed application/pdf en http://irep.iium.edu.my/27110/1/022_JMPT_127%282%29_256-260.pdf Hung, NguyenPhu and Fu, Yongqi and Ali, Mohammad Yeakub (2002) Focused ion beam machining of silicon. Journal of Materials Processing Technology, 127 (2). pp. 256-260. ISSN 0924-0136 http://www.sciencedirect.com/science/article/pii/S092401360200153X 10.1016/S0924-0136(02)00153-X
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English
topic	TS Manufactures
spellingShingle	TS Manufactures Hung, NguyenPhu Fu, Yongqi Ali, Mohammad Yeakub Focused ion beam machining of silicon
description	This paper optimizes the parameters of a focused gallium ion beam system for the micromachining of single-crystal silicon. The effect of the parameters on the surface integrity and material removal rate (MRR) were studied. The surface integrity and machined features were measured with a scanning probe microscope. Statistical models were established to predict the sputtered depths and MRRs. The sputtering depth increased with higher accelerating voltage, more ion dose, shorter pixel spacing, and longer dwell time. Similar trends were found for predicting the MRR. A surface roughness in the range of 2-5 nm was achieved, and was found to be linearly dependent on the pixel spacing. © 2002 Elsevier Science B.V. All rights reserved.
format	Article
author	Hung, NguyenPhu Fu, Yongqi Ali, Mohammad Yeakub
author_facet	Hung, NguyenPhu Fu, Yongqi Ali, Mohammad Yeakub
author_sort	Hung, NguyenPhu
title	Focused ion beam machining of silicon
title_short	Focused ion beam machining of silicon
title_full	Focused ion beam machining of silicon
title_fullStr	Focused ion beam machining of silicon
title_full_unstemmed	Focused ion beam machining of silicon
title_sort	focused ion beam machining of silicon
publisher	Elsevier BV
publishDate	2002
url	http://irep.iium.edu.my/27110/ http://irep.iium.edu.my/27110/ http://irep.iium.edu.my/27110/ http://irep.iium.edu.my/27110/1/022_JMPT_127%282%29_256-260.pdf
first_indexed	2023-09-18T20:40:18Z
last_indexed	2023-09-18T20:40:18Z
_version_	1777409320534671360

Focused ion beam machining of silicon

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