Top-down fabrication of single crystal silicon nanowire using optical lithography
A method for fabricating single crystal silicon nanowires is presented using top-down optical lithography and anisotropic etching. Wire diameters as small as 10 nm are demonstrated using silicon on insulator substrates. Structural characterization confirms that wires are straight, have a triangular...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Institute of Physics
2012
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/25004/ http://irep.iium.edu.my/25004/1/Top-down_fabrication_of_single_crystal_silicon_nanowire_using_optical.pdf |