Top-down fabrication of single crystal silicon nanowire using optical lithography

A method for fabricating single crystal silicon nanowires is presented using top-down optical lithography and anisotropic etching. Wire diameters as small as 10 nm are demonstrated using silicon on insulator substrates. Structural characterization confirms that wires are straight, have a triangular...

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Main Authors:	Za'bah, Nor Farahidah, Kwa, Kelvin S. K., Bowen, Leon, Mendis, Budhika, O'Neill, Anthony
Format:	Article
Language:	English
Published:	American Institute of Physics 2012
Subjects:	QC Physics TA401 Materials of engineering and construction
Online Access:	http://irep.iium.edu.my/25004/ http://irep.iium.edu.my/25004/1/Top-down_fabrication_of_single_crystal_silicon_nanowire_using_optical.pdf

id	iium-25004
recordtype	eprints
spelling	iium-250042012-08-03T00:00:21Z http://irep.iium.edu.my/25004/ Top-down fabrication of single crystal silicon nanowire using optical lithography Za'bah, Nor Farahidah Kwa, Kelvin S. K. Bowen, Leon Mendis, Budhika O'Neill, Anthony QC Physics TA401 Materials of engineering and construction A method for fabricating single crystal silicon nanowires is presented using top-down optical lithography and anisotropic etching. Wire diameters as small as 10 nm are demonstrated using silicon on insulator substrates. Structural characterization confirms that wires are straight, have a triangular cross section and are without breakages over lengths of tens of microns. Electrical characterization indicates bulk like mobility values, not strongly influenced by surface scattering or quantum confinement. Processing is compatible with conventional silicon technology having much larger critical dimensions. Integrating such nanowires with a mature CMOS technology offers an inexpensive route to their exploitation as sensors. American Institute of Physics 2012-07-19 Article PeerReviewed application/pdf en http://irep.iium.edu.my/25004/1/Top-down_fabrication_of_single_crystal_silicon_nanowire_using_optical.pdf Za'bah, Nor Farahidah and Kwa, Kelvin S. K. and Bowen, Leon and Mendis, Budhika and O'Neill, Anthony (2012) Top-down fabrication of single crystal silicon nanowire using optical lithography. Journal of Applied Physics, 112. 024309-024309. ISSN 0021-8979
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English
topic	QC Physics TA401 Materials of engineering and construction
spellingShingle	QC Physics TA401 Materials of engineering and construction Za'bah, Nor Farahidah Kwa, Kelvin S. K. Bowen, Leon Mendis, Budhika O'Neill, Anthony Top-down fabrication of single crystal silicon nanowire using optical lithography
description	A method for fabricating single crystal silicon nanowires is presented using top-down optical lithography and anisotropic etching. Wire diameters as small as 10 nm are demonstrated using silicon on insulator substrates. Structural characterization confirms that wires are straight, have a triangular cross section and are without breakages over lengths of tens of microns. Electrical characterization indicates bulk like mobility values, not strongly influenced by surface scattering or quantum confinement. Processing is compatible with conventional silicon technology having much larger critical dimensions. Integrating such nanowires with a mature CMOS technology offers an inexpensive route to their exploitation as sensors.
format	Article
author	Za'bah, Nor Farahidah Kwa, Kelvin S. K. Bowen, Leon Mendis, Budhika O'Neill, Anthony
author_facet	Za'bah, Nor Farahidah Kwa, Kelvin S. K. Bowen, Leon Mendis, Budhika O'Neill, Anthony
author_sort	Za'bah, Nor Farahidah
title	Top-down fabrication of single crystal silicon nanowire using optical lithography
title_short	Top-down fabrication of single crystal silicon nanowire using optical lithography
title_full	Top-down fabrication of single crystal silicon nanowire using optical lithography
title_fullStr	Top-down fabrication of single crystal silicon nanowire using optical lithography
title_full_unstemmed	Top-down fabrication of single crystal silicon nanowire using optical lithography
title_sort	top-down fabrication of single crystal silicon nanowire using optical lithography
publisher	American Institute of Physics
publishDate	2012
url	http://irep.iium.edu.my/25004/ http://irep.iium.edu.my/25004/1/Top-down_fabrication_of_single_crystal_silicon_nanowire_using_optical.pdf
first_indexed	2023-09-18T20:37:23Z
last_indexed	2023-09-18T20:37:23Z
_version_	1777409136862953472

Top-down fabrication of single crystal silicon nanowire using optical lithography

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