Novel nuclear technology for controlled production of n-type semiconductor
Use of semiconductors for power electronics requires unique material characteristics because of the high power levels flowing in the devices. In this research, NTD silicon was try to be developed by using Cf-252 isotopic neutron radioactive sourced (1.6 mCi) instead of using neutron source from nu...
| Main Authors: | , , |
|---|---|
| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2010
|
| Subjects: | |
| Online Access: | http://irep.iium.edu.my/23157/ http://irep.iium.edu.my/23157/ http://irep.iium.edu.my/23157/1/p50.pdf |
| Summary: | Use of semiconductors for power electronics requires unique material characteristics because of the
high power levels flowing in the devices. In this research, NTD silicon was try to be developed by using
Cf-252 isotopic neutron radioactive sourced (1.6 mCi) instead of using neutron source from nuclear
reactor. It was found that concentration of P between 0.5 and 14 wt% could be produced by irradiating
silicon using netron between 1 and 5 days. It was proved that the irradiation time did not change the
mechanical property of the material. |
|---|