Reverse leakage current mechanisms in quantum dot laser structures

Dark current-voltage measurements undertaken on a series of InAs based quantum dot laser structures show significant variations depending on the growth conditions of the GaAs barrier layer. A systematic study of their temperature dependence suggests that the main mechanism determining the rever...

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Main Authors:	Hasbullah, Nurul Fadzlin, David, John P. R.
Format:	Conference or Workshop Item
Language:	English English
Published:	2011
Subjects:	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:	http://irep.iium.edu.my/17653/ http://irep.iium.edu.my/17653/ http://irep.iium.edu.my/17653/ http://irep.iium.edu.my/17653/1/IEEE_MnN_vs_7.pdf http://irep.iium.edu.my/17653/4/Reverse_leakage_current_mechanisms_in_quantum.pdf

id	iium-17653
recordtype	eprints
spelling	iium-176532015-09-09T05:45:40Z http://irep.iium.edu.my/17653/ Reverse leakage current mechanisms in quantum dot laser structures Hasbullah, Nurul Fadzlin David, John P. R. TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Dark current-voltage measurements undertaken on a series of InAs based quantum dot laser structures show significant variations depending on the growth conditions of the GaAs barrier layer. A systematic study of their temperature dependence suggests that the main mechanism determining the reverse leakage is due to generation–recombination via mid-band traps assisted by Frenkel-Poole emission of carriers from these traps. Since the dark current is a relatively parameter to determine in a device, optimising this is a quicker means of optimising the growth parameters than undertaking full laser testing. I. INTRODUCTION 2011 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/17653/1/IEEE_MnN_vs_7.pdf application/pdf en http://irep.iium.edu.my/17653/4/Reverse_leakage_current_mechanisms_in_quantum.pdf Hasbullah, Nurul Fadzlin and David, John P. R. (2011) Reverse leakage current mechanisms in quantum dot laser structures. In: RSM 2011, 28-30 Sep 2011. http://dx.doi.org/10.1109/RSM.2011.6088285 doi:10.1109/RSM.2011.6088285
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English
topic	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
spellingShingle	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Hasbullah, Nurul Fadzlin David, John P. R. Reverse leakage current mechanisms in quantum dot laser structures
description	Dark current-voltage measurements undertaken on a series of InAs based quantum dot laser structures show significant variations depending on the growth conditions of the GaAs barrier layer. A systematic study of their temperature dependence suggests that the main mechanism determining the reverse leakage is due to generation–recombination via mid-band traps assisted by Frenkel-Poole emission of carriers from these traps. Since the dark current is a relatively parameter to determine in a device, optimising this is a quicker means of optimising the growth parameters than undertaking full laser testing. I. INTRODUCTION
format	Conference or Workshop Item
author	Hasbullah, Nurul Fadzlin David, John P. R.
author_facet	Hasbullah, Nurul Fadzlin David, John P. R.
author_sort	Hasbullah, Nurul Fadzlin
title	Reverse leakage current mechanisms in quantum dot laser structures
title_short	Reverse leakage current mechanisms in quantum dot laser structures
title_full	Reverse leakage current mechanisms in quantum dot laser structures
title_fullStr	Reverse leakage current mechanisms in quantum dot laser structures
title_full_unstemmed	Reverse leakage current mechanisms in quantum dot laser structures
title_sort	reverse leakage current mechanisms in quantum dot laser structures
publishDate	2011
url	http://irep.iium.edu.my/17653/ http://irep.iium.edu.my/17653/ http://irep.iium.edu.my/17653/ http://irep.iium.edu.my/17653/1/IEEE_MnN_vs_7.pdf http://irep.iium.edu.my/17653/4/Reverse_leakage_current_mechanisms_in_quantum.pdf
first_indexed	2023-09-18T20:26:38Z
last_indexed	2023-09-18T20:26:38Z
_version_	1777408459962056704

Reverse leakage current mechanisms in quantum dot laser structures

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