Correlation between defect density and current leakage in InAs∕GaAs quantum dot-in-well structures
We present a study of InAs/GaAs quantum dot-in-well �DWELL� material using transmission electron microscopy and leakage current-voltage measurements. The spacer layers between the DWELL layers have a variety of annealing and growth temperatures. We show that there is a strong correlation between spa...
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American Institute of Physics
2009
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| Online Access: | http://irep.iium.edu.my/17647/ http://irep.iium.edu.my/17647/ http://irep.iium.edu.my/17647/ http://irep.iium.edu.my/17647/1/Correlation_between_defect_density_and_current_leakage_-_Sanchez_JAP_2009.pdf |
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iium-176472012-02-06T03:33:29Z http://irep.iium.edu.my/17647/ Correlation between defect density and current leakage in InAs∕GaAs quantum dot-in-well structures Sanchez, A. M. Beanland, R. Hasbullah, Nurul Fadzlin Hopkinson, M. David, J. P. R. TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices We present a study of InAs/GaAs quantum dot-in-well �DWELL� material using transmission electron microscopy and leakage current-voltage measurements. The spacer layers between the DWELL layers have a variety of annealing and growth temperatures. We show that there is a strong correlation between spacer layer, annealing temperature, defect density, and these leakage currents, with the most defective sample having 30 times more defects and a leakage current several orders of magnitude above that of the least defective. Cross section transmission electron microscope �TEM� shows that surface roughness above defective dots is responsible for the high defect densities. However, even in the best sample the reverse bias leakage current is several orders of magnitude above that typically seen in quantum well materials and a measurable density of defective dots are observed in planar view TEM. © 2009 American Institute of Physics American Institute of Physics 2009 Article PeerReviewed application/pdf en http://irep.iium.edu.my/17647/1/Correlation_between_defect_density_and_current_leakage_-_Sanchez_JAP_2009.pdf Sanchez, A. M. and Beanland, R. and Hasbullah, Nurul Fadzlin and Hopkinson, M. and David, J. P. R. (2009) Correlation between defect density and current leakage in InAs∕GaAs quantum dot-in-well structures. Journal of Applied Physics, 106 (2). 024502. ISSN 0021-8979 http://dx.doi.org/10.1063/1.3168492 doi:10.1063/1.3168492 |
| repository_type |
Digital Repository |
| institution_category |
Local University |
| institution |
International Islamic University Malaysia |
| building |
IIUM Repository |
| collection |
Online Access |
| language |
English |
| topic |
TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices |
| spellingShingle |
TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Sanchez, A. M. Beanland, R. Hasbullah, Nurul Fadzlin Hopkinson, M. David, J. P. R. Correlation between defect density and current leakage in InAs∕GaAs quantum dot-in-well structures |
| description |
We present a study of InAs/GaAs quantum dot-in-well �DWELL� material using transmission electron microscopy and leakage current-voltage measurements. The spacer layers between the DWELL layers have a variety of annealing and growth temperatures. We show that there is a strong correlation between spacer layer, annealing temperature, defect density, and these leakage currents, with the most defective sample having 30 times more defects and a leakage current several orders of magnitude above that of the least defective. Cross section transmission electron microscope
�TEM� shows that surface roughness above defective dots is responsible for the high defect densities. However, even in the best sample the reverse bias leakage current is several orders of magnitude above that typically seen in quantum well materials and a measurable density of defective dots are observed in planar view TEM. © 2009 American Institute of Physics |
| format |
Article |
| author |
Sanchez, A. M. Beanland, R. Hasbullah, Nurul Fadzlin Hopkinson, M. David, J. P. R. |
| author_facet |
Sanchez, A. M. Beanland, R. Hasbullah, Nurul Fadzlin Hopkinson, M. David, J. P. R. |
| author_sort |
Sanchez, A. M. |
| title |
Correlation between defect density and current leakage in InAs∕GaAs quantum dot-in-well structures |
| title_short |
Correlation between defect density and current leakage in InAs∕GaAs quantum dot-in-well structures |
| title_full |
Correlation between defect density and current leakage in InAs∕GaAs quantum dot-in-well structures |
| title_fullStr |
Correlation between defect density and current leakage in InAs∕GaAs quantum dot-in-well structures |
| title_full_unstemmed |
Correlation between defect density and current leakage in InAs∕GaAs quantum dot-in-well structures |
| title_sort |
correlation between defect density and current leakage in inas∕gaas quantum dot-in-well structures |
| publisher |
American Institute of Physics |
| publishDate |
2009 |
| url |
http://irep.iium.edu.my/17647/ http://irep.iium.edu.my/17647/ http://irep.iium.edu.my/17647/ http://irep.iium.edu.my/17647/1/Correlation_between_defect_density_and_current_leakage_-_Sanchez_JAP_2009.pdf |
| first_indexed |
2023-09-18T20:26:37Z |
| last_indexed |
2023-09-18T20:26:37Z |
| _version_ |
1777408459523751936 |