Design of a low noise amplifier with GaAs MESFET at Ku-Band

Design of a low noise amplifier with GaAs MESFET at Ku-Band

Ku-Band low noise amplifier has been designed with the gain of 8.90 dB and 2.19 dB noise figure for satellite receiver. The parameters are optimized by using Microwave Office Simulator (AWR) Ver. 2006. The size of the monolithic chip is 0.316mm2. The LNA is designed to operate at 12GHz.

Bibliographic Details
Main Authors: Islam, Md. Rafiqul, Alam, A. H. M. Zahirul, Khan, Sheroz, Shabana, Arafat A. A
Format: Conference or Workshop Item
Language:English
Published: IEEE 2010
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://irep.iium.edu.my/1632/
http://irep.iium.edu.my/1632/
http://irep.iium.edu.my/1632/1/05556786.pdf
id iium-1632
recordtype eprints
spelling iium-16322017-08-02T08:38:17Z http://irep.iium.edu.my/1632/ Design of a low noise amplifier with GaAs MESFET at Ku-Band Islam, Md. Rafiqul Alam, A. H. M. Zahirul Khan, Sheroz Shabana, Arafat A. A TK Electrical engineering. Electronics Nuclear engineering Ku-Band low noise amplifier has been designed with the gain of 8.90 dB and 2.19 dB noise figure for satellite receiver. The parameters are optimized by using Microwave Office Simulator (AWR) Ver. 2006. The size of the monolithic chip is 0.316mm2. The LNA is designed to operate at 12GHz. IEEE 2010 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/1632/1/05556786.pdf Islam, Md. Rafiqul and Alam, A. H. M. Zahirul and Khan, Sheroz and Shabana, Arafat A. A (2010) Design of a low noise amplifier with GaAs MESFET at Ku-Band. In: International Conference on Computer and Communication Engineering (ICCCE 2010), 11-13 May 2010, Kuala Lumpur. http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5556786&tag=1
repository_type Digital Repository
institution_category Local University
institution International Islamic University Malaysia
building IIUM Repository
collection Online Access
language English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Islam, Md. Rafiqul
Alam, A. H. M. Zahirul
Khan, Sheroz
Shabana, Arafat A. A
Design of a low noise amplifier with GaAs MESFET at Ku-Band
description Ku-Band low noise amplifier has been designed with the gain of 8.90 dB and 2.19 dB noise figure for satellite receiver. The parameters are optimized by using Microwave Office Simulator (AWR) Ver. 2006. The size of the monolithic chip is 0.316mm2. The LNA is designed to operate at 12GHz.
format Conference or Workshop Item
author Islam, Md. Rafiqul
Alam, A. H. M. Zahirul
Khan, Sheroz
Shabana, Arafat A. A
author_facet Islam, Md. Rafiqul
Alam, A. H. M. Zahirul
Khan, Sheroz
Shabana, Arafat A. A
author_sort Islam, Md. Rafiqul
title Design of a low noise amplifier with GaAs MESFET at Ku-Band
title_short Design of a low noise amplifier with GaAs MESFET at Ku-Band
title_full Design of a low noise amplifier with GaAs MESFET at Ku-Band
title_fullStr Design of a low noise amplifier with GaAs MESFET at Ku-Band
title_full_unstemmed Design of a low noise amplifier with GaAs MESFET at Ku-Band
title_sort design of a low noise amplifier with gaas mesfet at ku-band
publisher IEEE
publishDate 2010
url http://irep.iium.edu.my/1632/
http://irep.iium.edu.my/1632/
http://irep.iium.edu.my/1632/1/05556786.pdf
first_indexed 2023-09-18T20:09:03Z
last_indexed 2023-09-18T20:09:03Z
_version_ 1777407353892634624

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