p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency

Amodification of the thickness of the low-growth- emperature component of the GaAs spacer layers in multilayer 1.3 um InAs/GaAs quantum-dot (QD) lasers has been used to significantly improve device performance. For a p-doped seven-layer device, a reduction in the thickness of this component from 15...

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Main Authors:	Liu, H. Y., Liew, S. L., Badcock, T., Mowbray, D. J., Skolnick, M. S., Ray, S. K., Choi, T. L., Groom, K. M., Stevens, B., Hasbullah, Nurul Fadzlin, Jin, C. Y., Hopkinson, M., Hogg, R. A.
Format:	Article
Language:	English
Published:	American Institute of Physics 2006
Subjects:	QC Physics TA1501 Applied optics. Lasers
Online Access:	http://irep.iium.edu.my/1306/ http://irep.iium.edu.my/1306/ http://irep.iium.edu.my/1306/ http://irep.iium.edu.my/1306/1/p-doped__1.3um_InAs-GaAs_QD_laser-Liu_2006.pdf

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recordtype	eprints
spelling	iium-13062011-08-15T03:33:01Z http://irep.iium.edu.my/1306/ p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency Liu, H. Y. Liew, S. L. Badcock, T. Mowbray, D. J. Skolnick, M. S. Ray, S. K. Choi, T. L. Groom, K. M. Stevens, B. Hasbullah, Nurul Fadzlin Jin, C. Y. Hopkinson, M. Hogg, R. A. QC Physics TA1501 Applied optics. Lasers Amodification of the thickness of the low-growth- emperature component of the GaAs spacer layers in multilayer 1.3 um InAs/GaAs quantum-dot (QD) lasers has been used to significantly improve device performance. For a p-doped seven-layer device, a reduction in the thickness of this component from 15 to 2 nm results in a reduced reverse bias leakage current and an increase in the intensity of the spontaneous emission. In addition, a significant reduction of the threshold current density and an increase of the external differential efficiency at room temperature are obtained. These improvements indicate a reduced defect density, most probably a combination of the selective elimination of a very low density of dislocated dots and a smaller number of defects in the thinner low-growth-temperature component of the GaAs spacer layer. American Institute of Physics 2006-08-17 Article PeerReviewed application/pdf en http://irep.iium.edu.my/1306/1/p-doped__1.3um_InAs-GaAs_QD_laser-Liu_2006.pdf Liu, H. Y. and Liew, S. L. and Badcock, T. and Mowbray, D. J. and Skolnick, M. S. and Ray, S. K. and Choi, T. L. and Groom, K. M. and Stevens, B. and Hasbullah, Nurul Fadzlin and Jin, C. Y. and Hopkinson, M. and Hogg, R. A. (2006) p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency. Applied Physics Letter, 89 (7). 073113-1. ISSN 1077-3118 (O), 0003-6951 (P) http://apl.aip.org/resource/1/applab/v89/i7/p073113_s1?isAuthorized=no doi:10.1063/1.2336998
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English
topic	QC Physics TA1501 Applied optics. Lasers
spellingShingle	QC Physics TA1501 Applied optics. Lasers Liu, H. Y. Liew, S. L. Badcock, T. Mowbray, D. J. Skolnick, M. S. Ray, S. K. Choi, T. L. Groom, K. M. Stevens, B. Hasbullah, Nurul Fadzlin Jin, C. Y. Hopkinson, M. Hogg, R. A. p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency
description	Amodification of the thickness of the low-growth- emperature component of the GaAs spacer layers in multilayer 1.3 um InAs/GaAs quantum-dot (QD) lasers has been used to significantly improve device performance. For a p-doped seven-layer device, a reduction in the thickness of this component from 15 to 2 nm results in a reduced reverse bias leakage current and an increase in the intensity of the spontaneous emission. In addition, a significant reduction of the threshold current density and an increase of the external differential efficiency at room temperature are obtained. These improvements indicate a reduced defect density, most probably a combination of the selective elimination of a very low density of dislocated dots and a smaller number of defects in the thinner low-growth-temperature component of the GaAs spacer layer.
format	Article
author	Liu, H. Y. Liew, S. L. Badcock, T. Mowbray, D. J. Skolnick, M. S. Ray, S. K. Choi, T. L. Groom, K. M. Stevens, B. Hasbullah, Nurul Fadzlin Jin, C. Y. Hopkinson, M. Hogg, R. A.
author_facet	Liu, H. Y. Liew, S. L. Badcock, T. Mowbray, D. J. Skolnick, M. S. Ray, S. K. Choi, T. L. Groom, K. M. Stevens, B. Hasbullah, Nurul Fadzlin Jin, C. Y. Hopkinson, M. Hogg, R. A.
author_sort	Liu, H. Y.
title	p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency
title_short	p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency
title_full	p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency
title_fullStr	p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency
title_full_unstemmed	p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency
title_sort	p-doped 1.3 μm inas/gaas quantum-dot laser with a low threshold current density and high differential efficiency
publisher	American Institute of Physics
publishDate	2006
url	http://irep.iium.edu.my/1306/ http://irep.iium.edu.my/1306/ http://irep.iium.edu.my/1306/ http://irep.iium.edu.my/1306/1/p-doped__1.3um_InAs-GaAs_QD_laser-Liu_2006.pdf
first_indexed	2023-09-18T20:08:33Z
last_indexed	2023-09-18T20:08:33Z
_version_	1777407323250098176

p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency

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